Syllabus - Electronic Devices and Circuits (EI303)


Electronics & Instrumentation Engineering

Electronic Devices and Circuits (EI303)

III-Semester

Basics of semiconductor devices

Intrinsic & Extrinsic semiconductors, Mobility and Conductivity, Hall effect, E-K diagram, Current Densities, Diffusion, Generation & Recombination of electron-hole pair, Continuity equation, Conductivity Modulation, Mass-action Law, Injected Minority Carrier Charge, p-n junction diode, V-I characteristics & their temperature dependence, Diode resistances, and capacitance, Breakdown diodes, Photodiodes, LEDs, Varacter Diode, Schottky Diode, Tunnel Diode,

Diode and Transistor circuits

Clippers, Clampers, Clamping theorem, Rectifiers & filters, Model of diode, Bipolar junction transistor (BJT), Potential profile in PNP & NPN structures, Current components, Configurations, Early Effect, Eber’s Moll Model, Transistor as an amplifier, Biasing & Thermal Stabilization, The Q point stability, Stabilization against variation of ICO, VBE & β, Bias compensation, Millers theorem and its dual, Thermal runway, Schottky and Photo-transistors.

BJT Modelling and Introduction to FET

Hybrid model, Simplified model, Common emitter with emitter resistor, high i/p impedance circuits, Emitter follower, comparison of CB, CE, CC configuration, Darlington pair, Bootstrapping, Cascode Amplifier, Field effect transistors(FET), JFET, pinch off, V-I Characteristics, Small signal model, MOSFET, Derivation for drain current ID for E-MOSFET, Threshold voltage and body effect, CS & CD amplifiers, Biasing techniques, FET as VDR,

MOS Structure and Short channel effect theory

Band diagram for a MOS junction under accumulation, Depletion & inversion, MOS capacitor, C-V of an ideal & non- ideal capacitors, Characterization of MOS capacitors, MOS field effect transistor (MOSFET) V-I characteristics in three regions of operation & equivalent circuit. Short channel MOSFET: Effect of scaling of MOSFET, Short & narrow channel effects on V-I characteristics, Hot electron effect in MOSFET.

Silicon Processing and Introduction to Power electronic devices

Silicon Planar technology, Oxidation, Diffusion, Metallization, Ion-Implantation & chemical vapor deposition, Lithographic process, Typical Bipolar & MOS IC process sequence, Silicon controlled Rectifier, Holding and Latching current, di/dt triggering and other triggering methods & Unijunction Transistor (UJT) and UJT relaxation oscillator.

Practicals

Reference Books

  • Jacob Millman & Christos C. Halkias Electronic Devices & Circuits McGraw-Hill 1967.

  • Robert L. Boylestad, Electronic devices and Circuits, PHI.

  • Ben G. Streetman, Solid State Electronics Devices, Prentice Hall of India, 5th edition.

  • Tyagi M. S., Semiconductor Materials and Devices, John Wiley, 4th edition.