Syllabus - VLSI Technology (EI 802 (A))

Electronics & Instrumentation Engineering

VLSI Technology (EI 802 (A))

VIII-Semester

UNIT-1

Crystal Growth and Wafer preparation

Wafer terminology, Different crystalline orientations, CZ method, CMOS IC Design flow, Crystal Defects. Fabrication processes of FETs, MOSFETs, and BIMOS etc.

UNIT-2

Layering

Epitaxial growth methods, Liquid phase epitaxy, Vapor phase epitaxy, Molecular beam epitaxy, Oxidation, Types of oxidation, Horizontal and vertical tube furnace for oxidation, Kinetics of oxidation, Thin film fabrication, Metallization; Physical Vapor Deposition, Sputtering.

UNIT-3

Patterning

Lithography; Optical Lithography, Electron Lithography, X-ray Lithography, Ion Lithography. Photo masking steps, Resists. Doping: Diffusion; Diffusion Models, Ion Implantation; Implantation Equipment, Channelling.

UNIT-4

VLSI process techniques and Integration

Floor planning, layout, Design rules, stick diagrams, Test generation, Logic simulation, Introduction to EDA tools. Contamination Control; Clean rooms, HEPA, ULPA Filters and Class numbers.

UNIT-5

Subsystem Design

Data-paths; adder, Shift registers ALU, Memory; NVRWM, Flash memories,6-Transistor RAMs Dynamic RAM, Read Write Cycle, Latch up in CMOS Circuits.

Practicals

Reference Books

  • Harold E. Smalley, Hospital Management Engineering – A guide to the improvement of hospital management system, Prentice Hall, 1982.

  • L. G. Redstone, Hospital and Health Care Facilities, McGraw Hill, 2002.

  • C. A. Caceras, Clinical Engineering, Academic Press, 1977.

  • J Davey and D Ali, Ward’s Anaesthetics Equipment’s, 6 th ed., Elsevier Health-UK, 2011.