VLSI Technology (EI 802 (A))-Electronics & Instrumentation Engineering (VIII-Semester) | RGPV
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Syllabus
- Syllabus - VLSI Technology (EI 802 (A))
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UNIT-1 Crystal Growth and Wafer preparation
- Crystal Growth and Wafer Preparation
- CMOS IC Design Flow
- Crystal Defects
- Fabrication Processes
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UNIT-2 Layering
- Epitaxial Growth Methods
- Oxidation
- Thin Film Fabrication and Metallization
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UNIT-3 Patterning
- Lithography
- Doping
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UNIT-4 VLSI process techniques and Integration
- VLSI Process Techniques
- Contamination Control
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UNIT-5 Subsystem Design
- Data-paths
- Memory