Syllabus - VLSI Design (EI 703 (A))


Electronics & Instrumentation Engineering

VLSI Design (EI 703 (A))

VII

Unit-I

Introduction to CMOS circuit, Circuit & System representation

Behavioural representation, structural representation. Physical representation MOS transistor theory. NMOS and PMOS enhancement transistor. Threshold voltage, body effect. MOS device design equation. Basic DC equation, second order effects, MOS models.

Unit-II

The complementary CMOS inverter-DC character, Static load MOS inverters

The differential inverter. Tristate inverter. Bipolar devices, diodes, transistors, BICMOS inverters.

Unit-III

Review of silicon semiconductor technology and basic CMOS technology-n-well and p-well process

Interconnect and circuit Twin-tub process layout design rules and latch-up, latch-up triggering and prevention.

Unit-IV

Circuit characterization and performance estimation resistance and capacitance estimation, Switching characteristics, CMOS gate transistor sizing, power dissipation

Basic physical design of simple logic gates. CMOS logic structure.

Unit-V

CMOS design methods. Design strategies. Programmable logic, programmable logic structure, reprogrammbale gate arrays. Exiling programmable gate array. Algotonix, concurrent logic, sea of gate and gate array design VHDL as a tool.

Practicals

Reference Books

  • Neil, H.E. Wasdte, Kamran Eshraghian, Principles of CMOS VLSI design, Pearson Education.

  • Wyne Wolf, Modern VLSI Design-system on silicon, PHI.

  • Phillip E. Allen and Douglas R holding, CMOS Analog Circuit Design, 2nd edition, Oxford University press.